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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MAC4DCM/D TRIACS Silicon Bidirectional Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. * Small Size Surface Mount DPAK Package * Passivated Die for Reliability and Uniformity * Blocking Voltage to 800 V * On-State Current Rating of 4.0 Amperes RMS at 108C * High Immunity to dv/dt -- 500 V/ms at 125C * High Immunity to di/dt -- 6.0 A/ms at 125C G ORDERING INFORMATION * To Obtain "DPAK" in Surface Mount Leadform (Case 369A) Shipped in Sleeves -- No Suffix, i.e. MAC4DCN Shipped in 16 mm Tape and Reel -- Add "T4" Suffix to Device Number, i.e. MAC4DCNT4 * To Obtain "DPAK" in Straight Lead Version (Case 369) Shipped in Sleeves -- Add "-1" Suffix to Device Number, i.e. MAC4DCN-1 MT2 MAC4DCM MAC4DCN Motorola Preferred Devices TRIACS 4.0 AMPERES RMS 600 thru 800 VOLTS MT2 MT1 MT1 MT2 G CASE 369A-13 STYLE 6 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Peak Repetitive Off-State Voltage (1) (TJ = -40 to 125C, Sine Wave, 50 to 60 Hz, Gate Open) On-State RMS Current (Full Cycle Sine Wave, 60 Hz, TC = 108C) Peak Non-Repetitive Surge Current (One Full Cycle, 60 Hz, TJ = 125C) Circuit Fusing Consideration (t = 8.3 msec) Peak Gate Power (Pulse Width 10 msec, TC = 108C) Average Gate Power (t = 8.3 msec, TC = 108C) Peak Gate Current (Pulse Width 10 msec, TC = 108C) Peak Gate Voltage (Pulse Width 10 msec, TC = 108C) Operating Junction Temperature Range Storage Temperature Range MAC4DCM MAC4DCN IT(RMS) 4.0 ITSM 40 I2t PGM 0.5 PG(AV) 0.1 IGM VGM TJ Tstg 0.5 5.0 -40 to 125 -40 to 150 Amps Volts C 6.6 A2sec Watts Symbol VDRM 600 800 Amps Value Unit Volts THERMAL CHARACTERISTICS Characteristic Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (2) Symbol RqJC RqJA RqJA Max 3.5 88 80 Unit C/W Maximum Lead Temperature for Soldering Purposes (3) TL 260 C (1) VDRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the device are exceeded. (2) Surface mounted on minimum recommended pad size. (3) 1/8 from case for 10 seconds. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Thyristor Device Data (c) Motorola, Inc. 1997 1 MAC4DCM MAC4DCN ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristics Peak Repetitive Blocking Current (VD = Rated VDRM, Gate Open) Peak On-State Voltage (1) (ITM = 6.0 A) Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) MT2(+), G(+); MT2(+), G(-); MT2(-), G(-) TJ = 125C Holding Current (VD = 12 V, Gate Open, IT = 200 mA) Latching Current (VD = 12 V, IG = 35 mA) MT2(+), G(+) MT2(+), G(-) MT2(-), G(-) TJ = 25C TJ = 125C VTM -- IGT 8.0 8.0 8.0 VGT 0.5 0.5 0.5 0.2 IH 6.0 IL -- -- -- 30 50 20 60 80 60 22 35 mA 0.8 0.8 0.8 0.4 1.3 1.3 1.3 -- mA 12 18 22 35 35 35 Volts 1.3 1.6 mA Symbol IDRM -- -- -- -- 0.01 2.0 Volts Min Typ Max Unit mA DYNAMIC CHARACTERISTICS Characteristics Rate of Change of Commutating Current (1) (VD = 400 V, ITM = 4.0 A, Commutating dv/dt = 18 V/msec, Gate Open, TJ = 125C, f = 250 Hz, CL = 5.0 mF, LL = 20 mH, No Snubber) See Figure 15 Critical Rate of Rise of Off-State Voltage (VD = 0.67 X Rated VDRM, Exponential Waveform, Gate Open, TJ = 125C) (1) Pulse test: Pulse Width 2.0 msec, Duty Cycle 2%. dv/dt 500 1700 -- Symbol di/dt(c) 6.0 8.4 -- Min Typ Max Unit A/ms V/ms 2 Motorola Thyristor Device Data MAC4DCM MAC4DCN TC , MAXIMUM ALLOWABLE CASE TEMPERATURE ( C) P(AV) , AVERAGE POWER DISSIPATION (WATTS) 125 6.0 180 5.0 dc 120 a = 30 60 90 120 90 4.0 3.0 2.0 a = CONDUCTION ANGLE 115 110 a = CONDUCTION ANGLE 120 180 dc 3.5 4.0 a = 30 1.0 0 0 1.0 2.0 3.0 60 105 0 0.5 1.0 1.5 2.0 2.5 3.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) 4.0 IT(RMS), RMS ON-STATE CURRENT (AMPS) Figure 1. RMS Current Derating Figure 2. On-State Power Dissipation I T, INSTANTANEOUS ON-STATE CURRENT (AMPS) TYPICAL @ TJ = 25C 10 MAXIMUM @ TJ = 125C r(t) , TRANSIENT RESISTANCE (NORMALIZED) 100 1.0 0.1 ZqJC(t) = RqJC(t)Sr(t) 1.0 MAXIMUM @ TJ = 25C 0.1 0 1.0 2.0 3.0 4.0 5.0 VT, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) 0.01 0.1 1.0 10 100 1000 10 k t, TIME (ms) Figure 3. On-State Characteristics Figure 4. Transient Thermal Response 60 VGT, GATE TRIGGER VOLTAGE(VOLTS) I GT, GATE TRIGGER CURRENT (mA) 50 40 30 Q2 20 Q1 10 0 -50 1.2 1.0 0.8 0.6 0.4 0.2 0 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Q2 Q3 Q1 Q3 Figure 5. Typical Gate Trigger Current versus Junction Temperature Figure 6. Typical Gate Trigger Voltage versus Junction Temperature Motorola Thyristor Device Data 3 MAC4DCM MAC4DCN 60 50 40 30 20 MT2 NEGATIVE 10 0 -50 MT2 POSITIVE 120 100 Q2 80 60 Q1 40 20 0 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C) Q3 IH , HOLDING CURRENT (mA) Figure 7. Typical Holding Current versus Junction Temperature IL, LATCHING CURRENT (mA) Figure 8. Typical Latching Current versus Junction Temperature 10 K TJ = 125C 8.0 K STATIC dv/dt (V/ ms) STATIC dv/dt (V/ m s) 15 K TJ = 125C VPK = 400 V 10 K 600 V 800 V 5.0 K 6.0 K 600 V 4.0 K 800 V VPK = 400 V 2.0 K 0 100 1000 RGK, GATE-MT1 RESISTANCE (OHMS) 10 K 0 100 1000 RGK, GATE-MT1 RESISTANCE (OHMS) 10 K Figure 9. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(+) Figure 10. Exponential Static dv/dt versus Gate-MT1 Resistance, MT2(-) 10 K 14 K 12 K GATE OPEN STATIC dv/dt (V/ m s) 10 K 8.0 K 6.0 K 4.0 K 2.0 K 0 400 500 600 700 800 400 500 600 700 800 VPK, PEAK VOLTAGE (VOLTS) VPK, PEAK VOLTAGE (VOLTS) 125C 110C TJ = 100C GATE OPEN 8.0 K STATIC dv/dt (V/ ms) TJ = 100C 6.0 K 110C 4.0 K 125C 2.0 K 0 Figure 11. Exponential Static dv/dt versus Peak Voltage, MT2(+) Figure 12. Exponential Static dv/dt versus Peak Voltage, MT2(-) 4 Motorola Thyristor Device Data MAC4DCM MAC4DCN 10 K 14 K 12 K 8.0 K STATIC dv/dt (V/ ms) VPK = 400 V 6.0 K 600 V 4.0 K 800 V 2.0 K 2.0 K 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (C) 0 100 105 110 115 120 125 TJ, JUNCTION TEMPERATURE (C) GATE OPEN STATIC dv/dt (V/ ms) 10 K 8.0 K 6.0 K 800 V 4.0 K 600 V VPK = 400 V GATE OPEN Figure 13. Typical Exponential Static dv/dt versus Junction Temperature, MT2(+) Figure 14. Typical Exponential Static dv/dt versus Junction Temperature, MT2(-) 100 VPK = 400 V dv/dt(c), CRITICAL RATE OF RISE OF COMMUTATING VOLTAGE (V/ ms) TJ = 125C 10 100C 75C tw VDRM f= 1 2 tw 6f I (di/dt)c = TM 1000 1.0 0 5.0 10 15 20 25 30 35 di/dt(c), RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure 15. Critical Rate of Rise of Commutating Voltage Motorola Thyristor Device Data 5 MAC4DCM MAC4DCN LL 200 VRMS ADJUST FOR ITM, 60 Hz VAC TRIGGER CHARGE CONTROL TRIGGER CONTROL MEASURE I - + 2 1N914 51 G 1 1N4007 CHARGE 400 V NON-POLAR CL Note: Component values are for verification of rated (dv/dt)c. See AN1048 for additional information. Figure 16. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Voltage 6 Motorola Thyristor Device Data MAC4DCM MAC4DCN PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M CASE 369A-13 ISSUE Y STYLE 6: PIN 1. 2. 3. 4. MT1 MT2 GATE MT2 Motorola Thyristor Device Data 7 MAC4DCM MAC4DCN Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 Motorola Thyristor Device Data MAC4DCM/D |
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